| PART |
Description |
Maker |
| W19B160BTT7H |
2.7~3.6-volt write (program and erase) operations, Fast write operation
|
Winbond
|
| CY14MB064Q1A-SXI CY14MB064Q1A-SXIT CY14MB064Q2A-SX |
64-Kbit (8 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
http://
|
| CY14C101J CY14B101J2-SXIT CY14E101J |
1-Mbit (128 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
| CY14B108L-BA25XI CY14B108L-BA45XI CY14B108L-BA25XI |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44 ROHS COMPLIANT, TSOP2-44
|
Cypress Semiconductor, Corp.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| M5M29GT161BWG M5M29GT161BVP M5M29GB161BVP |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16777216-bit CMOS 3.3V-only, block erase flash memory
|
Mitsubishi Electric Corporation
|
| 3100Y30U8999 3100-30U8999 3100-30V10999 3100-30V79 |
Contactors; 3100-30H10999CG=CONTACTOR ( Products Unlimited )
Definite Purpose Contactor 3-pole, 20-40 FLA AC Coil
|
Tyco Electronics
|
| 71AY23401 71AY23402 71BD36-3119 71BY23403 |
25,000 Cycles at 125 mA
|
Grayhill, Inc
|
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| STK15C88-SF25I STK15C88-SF25ITR STK15C88-NF25I STK |
256-Kbit (32 K x 8) PowerStore nvSRAM Unlimited RECALL Cycles
|
Cypress Semiconductor
|
| 3100-15V14999 3100-15V18999 3100-15V1999 3100-15V2 |
Contactors; 3100-15Q14999=CONTACTOR ( Products Unlimited )
Definite Purpose Contactor 1- or 2-pole, 20-40 FLA AC Coil
|
Tyco Electronics
|
